MOS TYPE FIELD EFFECT TRANSISTOR AND ITS MANUFACTURE,申请号JP19910243359-传众专利搜索

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发明名称	MOS TYPE FIELD EFFECT TRANSISTOR AND ITS MANUFACTURE
摘要
申请公布号	JPH0582777(A)	申请公布日期	1993.04.02
申请号	JP19910243359	申请日期	1991.09.24
申请人	NEC CORP	发明人	MOGAMI TORU
分类号	H01L29/78	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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