| 摘要 |
PURPOSE:To provide a semiconductor light emitting device, and thereof, especially a visible rays region semiconductor manufacture laser of 600nm wavelength band, in which a double hetero structure having good crystallinity obtained through high temperature growth is combined with high quality double hetero structure/contact layer interface obtained through low temperature growth. CONSTITUTION:In a semiconductor light emitting device in which double hetero structures 5, 6, 7, comprising clad layers 5, 7 of AlGaInP or AlInP sandwiching an active layer 6 of GaInP or AlGaInP, is provided on a p-type GaAs substrate 1, an intermediate layer 9 of n-type GaInP is inserted between the upper layer part of the double hetero structure, i.e., the clad layer 7 of n-type AlGaInP or AlInP, and a contact layer 8 of n-type GaAs thereabove. |
