| 摘要 |
PURPOSE:To prevent cracking in an epitaxial layer due to the difference between silicon and a semiconductor crystal in thermal expansion coefficient by epitaxially growing a semiconductor crystal with a silicon oxide film formed on one major surface of a silicon substrate as an insulating mask to form an LED array. CONSTITUTION:By using a silicon oxide film 2 formed on one major surface of a silicon substrate 1 as an insulating mask, a semiconductor crystal is epitaxially grown only in selected portions of this same surface. Thus, a single epitaxial layer 3 grown in the strip area where the insulating mask has been removed divided into a plurality of portions at intervals in the longitudinal direction, an LED array being formed. This reduces warp of the substrate 1 due to the difference between a thermal expansion coefficient of silicon and that of a semiconductor crystal. It also prevents the epitaxial layer 3 from cracking, resulting in the reduction of defective crystallization in an LED. |
