发明名称 BONDING METHOD OF SEMICONDUCTOR CHIP
摘要 PURPOSE:To enable a solder layer to be formed uniform in thickness between a semiconductor chip and a semiconductor support substrate restraining air bubbles from being induced in the solder later. CONSTITUTION:Molten solder 5 is made to drop down at the center of a semiconductor support substrate 1 where a groove 2 is provided, and the surface of the molten solder 5 is formed by pressure with a solder expanding jig 3 provided with four protrusions 30mum in height at four points located at its end. Thereafter, a semiconductor chip 6 is welded to the upper part of the formed molten solder 5 by pressure.
申请公布号 JPH0582568(A) 申请公布日期 1993.04.02
申请号 JP19910239529 申请日期 1991.09.19
申请人 MATSUSHITA ELECTRON CORP 发明人 HASHIMOTO AKIRA;TATENO KENICHI;YAMABE HIROSHI
分类号 H01L21/52;H01L23/50 主分类号 H01L21/52
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