发明名称 Thinly coated substrate forming T-shaped structure for testing characteristics of thin film material - has right-angled bend in each residual section of thin film supporting central limb of T
摘要 The structure (4) is formed in a region (3) of the substrate (1) which carries a thin film (2), removed from selected areas (5-7) to leave two lateral portions (8,9) incorporating 90-deg. bends, and a central portion (10). The lateral portions (8,9) support the centre (10) flexibly but exert next to no influence on variations in its length which consequently give a very precise measure of internal stresses. In an alternative embodiment, two such T-structures are formed back-to-back and thinly coupled. USE/ADVANTAGE - E.g. for determining thermal expansion coefficients or breaking elongation. Max. variations of geometrical dimensions can be detected with greater accuracy in consequence of normal stresses.
申请公布号 DE4134896(A1) 申请公布日期 1993.04.01
申请号 DE19914134896 申请日期 1991.10.18
申请人 SIEMENS AG, 8000 MUENCHEN, DE 发明人 ZHANG, JUNMING, DIPL.-ING.;HOUDEAU, DETLEF, DIPL.-ING.;STECKENBORN, ARNO, DIPL.-PHYS. DR., 1000 BERLIN, DE
分类号 G01N3/00;G01N3/02 主分类号 G01N3/00
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