摘要 |
The structure (4) is formed in a region (3) of the substrate (1) which carries a thin film (2), removed from selected areas (5-7) to leave two lateral portions (8,9) incorporating 90-deg. bends, and a central portion (10). The lateral portions (8,9) support the centre (10) flexibly but exert next to no influence on variations in its length which consequently give a very precise measure of internal stresses. In an alternative embodiment, two such T-structures are formed back-to-back and thinly coupled. USE/ADVANTAGE - E.g. for determining thermal expansion coefficients or breaking elongation. Max. variations of geometrical dimensions can be detected with greater accuracy in consequence of normal stresses.
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申请人 |
SIEMENS AG, 8000 MUENCHEN, DE |
发明人 |
ZHANG, JUNMING, DIPL.-ING.;HOUDEAU, DETLEF, DIPL.-ING.;STECKENBORN, ARNO, DIPL.-PHYS. DR., 1000 BERLIN, DE |