High power laser with semi-conductor filter.

摘要

The invention relates to a laser capable of operating at a wavelength L2 on the basis of an active material able to generate radiative emissions at at least two wavelengths L1 and L2, by virtue of the presence of a semiconductor plate in the laser cavity. In particular, the laser according to the invention can generate wavelengths of between 1.4 mu m and 2 mu m, a region in which the optical damage threshold of the eye is high, on the basis of an Nd<3+> doped YAG exhibiting numerous radiative emission wavelengths of between 0.946 mu m and 1.8 mu m. <IMAGE>