| 摘要 |
An amorphous material such as silicon is doped with a dopant, such as boron, in small amounts effective to reduce light-induced degradation. The dopant preferably is added in the vapor deposition of the amorphous material and results in a concentration of less than about 5x10<18> atoms/cm<3> in a film. The films may be used in applications such as photovoltaic devices, xerography drums, facsimile elements, thin film transistors, and particle detectors. |
