SRAM-address-change-detection circuit

摘要

For enabling a static, random-access-memory (500) bit lines (556 and 558) pre-charging circuit (518), employed is an address-change-detection circuit (510) having a plurality of address-change-detectors (570 and 572) each for detecting a change in an associated SRAM addressing signal and, driven by the address-change detectors (570 and 572), a pulse generator (700) driving the pre-charging circuit (518).