发明名称 |
Process for forming fine pattern |
摘要 |
In a process using a single-layer or multi-layer resist, by using a resist material comprising an acid-decomposable polymer, an acid generator and a conducting polymer or a resist material comprising a monomer to be made reactive by an acid, an acid generator and a conducting polymer, there can be formed a fine pattern precisely without inviting charging during charged beam writing.
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申请公布号 |
US5198326(A) |
申请公布日期 |
1993.03.30 |
申请号 |
US19910695328 |
申请日期 |
1991.05.03 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HASHIMOTO, KAZUHIKO;NOMURA, NOBORU |
分类号 |
G03F7/004;G03F7/038;G03F7/039;G03F7/09;G03F7/20;H01L21/027;H01L21/30 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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