发明名称 Process for forming fine pattern
摘要 In a process using a single-layer or multi-layer resist, by using a resist material comprising an acid-decomposable polymer, an acid generator and a conducting polymer or a resist material comprising a monomer to be made reactive by an acid, an acid generator and a conducting polymer, there can be formed a fine pattern precisely without inviting charging during charged beam writing.
申请公布号 US5198326(A) 申请公布日期 1993.03.30
申请号 US19910695328 申请日期 1991.05.03
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HASHIMOTO, KAZUHIKO;NOMURA, NOBORU
分类号 G03F7/004;G03F7/038;G03F7/039;G03F7/09;G03F7/20;H01L21/027;H01L21/30 主分类号 G03F7/004
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