发明名称 Transient protection circuit using common drain field effect transistors
摘要 A transient protection circuit provides protection from high voltage transients appearing along a transmission line by sensing a predetermined threshold of the voltage developed thereon and opening the conduction path through first and second switching circuits in the transmission line. The switching circuits are implemented with first and second serially coupled transistors sharing a common drain and enabled by a control signal during normal operation. The first and second transistors each have a diode oriented to conduct from the source to the drain for bi-directional operation. During high voltage transient conditions, a sensing circuit detect a predetermined threshold of the potential on the transmission line and disables one of the first and second transistors which opens the conduction path through the first and second switching circuits thereby suppressing the surge currents flowing therethrough.
申请公布号 US5198957(A) 申请公布日期 1993.03.30
申请号 US19900547882 申请日期 1990.07.02
申请人 MOTOROLA, INC. 发明人 WELTY, DENNIS L.;BLISS, JOHN;SUTOR, JUDITH L.;ROBB, STEPHEN P.;SUSAK, DAVID M.;HAYES, LLOYD H.
分类号 H02H3/20;H04M3/18 主分类号 H02H3/20
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