| 摘要 |
PURPOSE:To enable a resist pattern of either positive or negative type to be formed with high resolution, by incorporating a spiropyran derivative with a positive type resist resin. CONSTITUTION:A 1-4pts.wt. spiropyran derivative, such as 1', 3', 3'-trimethyl- 6'-nitrospiro [2H]-1-benzopyran-2,2'-indoline represented by the formula is incorporated with 100pts.wt positive type resist (a novolak resin, alkyl methacrylate polymer or copolymer, or the like consisting of a monomer or a polymer having quinonediazide and phenolic OH). This composition is coated on a glass substrate or the like having a Cr vapor deposite film, exposed in a desired pattern after prebaking, and subjected to developing followed by postbacking to form a positive type resist pattern. On the other hand, said coated substrate, after prebaking and patternwise exposure is heat-treated at 95-150 deg.C for 5-60min and after uniform exposure developed to obtain a negative type resist pattern. An alkaline solution is used for the developing solution, thus permitting both the positive and negative resist image having 1mu resolution to be obtained. |
