| 摘要 |
PURPOSE:To largely improve the operation lifetime of the laser element by controlling the density of P added to a GaAlAs active layer and thus alleviating the discordance of the lattice constant thereof. CONSTITUTION:The lifetime of the laser depends upon a slight lattice constant difference at the time of hetero epitaxial growth, a slight lattice constance variation caused by doping, and strains introduced by the mounting of electrodes and heat dissipating plate thereon. An N type GaAlAs layer and a P type GaAlAs active layer, a p type GaAlAs layer and a p type GaAs layer are sequentially laminated on an N type GaAs substrate, the addition of P to the active layer is controlled, crystal defect is prevented at the time of growing the active layer, lattice distortion thereof is prevented at room temperature, and the deterioration of a laser element can be remarkably suppressed. |
