| 摘要 |
PURPOSE:To obtain the diode which has preferable reverse characteristics and low positive voltage drop by coating a P<+> type layer in island shape on an N type layer on an N<+> type layer and coating Pt thereon. CONSTITUTION:The islandlike P<+> type layer 4 is formed on the N type epitaxial layer 2 on the N<+> type layer 1, the Pt layer 8 is deposited thereon, and a Schottky junction is formed between the layer 8 and the layer 2. Ni electrodes 5, 6 are formed respectively on the layers 1 and 8. When a voltage is appleid between the electrodes 6 and 5 and a forward voltage is applied to the P-N junction 3, the forward current will flow in parallel with the P-N junction and the Schottky junction 7. According to this configuration, electrons are injected from the layer 1 to the layer 2, while holes are injected from the layer 4, in case of flowing the forward current, a conductivity modulation occurs in the layer 2, and the resistance of the layer 2 is produced. Accordingly, a forward current will flow with sufficiently low voltage as compared with the forward voltage drop of the Schottky junction itself, and yet sufficiently high withstand voltage and low reverse current will be retained in reverse direction. |
