| 摘要 |
PURPOSE:To obtain the preferable ohmic connection between a gate electrode and an aluminum wire by interposing a polysilicon film between the gate electrode of refractory metal such as Mo or the like and the aluminum wire. CONSTITUTION:The gate oxide film 2, polysilicon film 3 and the Mo film 4 are laminated on an Si substrate 1, and a polysilicon film 7 is immediately grown in vapor phase. Thereafter, the films 7, 4 are patterned to form a gate part, with the gate part as a mask a source and drain are formed thereon, a PSG 5 is coated, is patternd, the aluminum wire 6 is formed, and is thus completed. According to this constitution, the preferable ohmic connection is formed between the electrode 4 and the wire 6. Since the electrode 4 is coated with the film 7, it is not oxidized by the later heat treatment, nor sublimated. Inasmuch as the film 4 has a thickness of approx. 2000Angstrom and can prevent transmission of impurity therethrough, it can be utilized in diffusing mask. It is noted that W, V, Hf, Cr and the like may by utilized in addition to the Mo. |
