发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To enable highly accurate sensing of data eliminating imbalance between first and second digit lines paired as formed in two layers without copying an increase in chip area. CONSTITUTION:First and second digit lines DL1 and DL2 paired are divided in two respectively (DL11, DL12, DL21, DL22). The digit lines DL11, DL12, DL21, and DL22 thus divided are so formed that those paired make different layers from each other, the one pair as first layer and the other as second layer. The digit lines divided originally are connected to each other at the divided part. The connection parts thus formed serve as connection part with a memory cell MC concurrently.
申请公布号 JPH0574144(A) 申请公布日期 1993.03.26
申请号 JP19910235793 申请日期 1991.09.17
申请人 NEC CORP 发明人 HAYASHI MINEO
分类号 G11C11/401;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/401
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