| 摘要 |
PURPOSE:To contrive mitigation of photo-deterioration and reduction in a processing period by a method wherein the impurity doping for formation of a delta-doped layer and the doping of atomic hydrogen for chemical annealing are conducted simultaneously. CONSTITUTION:A glass substrate 4 is placed on the heater panel provided on the bottom part of the vacuum vessel 1 of an RF plasma CVD device, and an upper electrode, which functions also as a gas blow-out hole 2, is provided on the upper part. An a-SiC:H layer is formed on the substrate 4 by bringing SiH4 C2H2 and H2 into a plasmic state by discharging RF during the filmforming period. The H2 which is turned into atomlike hydrogen, is introduced into the a-SiC:H during the period of scavanging, and the state of reticular lattice is stabilized. During the period of P-doping and annealing, B2H6/H2 is brought into a plasmic state by RF discharge, a p-type thin layer is formed by doping high density of boron in a short period of time, and a delta-doped layer is formed by diffusing boron. As a result, an amorphous semiconductor thin film, having excellent photoelectric characteristics, can be manufactured. |
