| 摘要 |
<p>PURPOSE:To realize uniform plasma processing and to prevent concentrative adhesion of reaction products to a clamp by retaining a sample, at the periphery thereof, by means of the clamp having temperature regulating mechanism thereby supplementing the temperature difference between the central part and the peripheral part of the sample. CONSTITUTION:A sample 2 mounted on a sample table, subjected to temperature conditioning through a sample table temperature control unit 11, is retained by means of a clamp 3 provided with a heater 8. A heat transmission medium supply section 4 then supplies heat transmission medium between the sample 2 and the sample table 1 while a processing gas supply section 5 supplies processing gas into a plasma processing chamber 6. Furthermore, high frequency power is applied from a high frequency power supply section 9 onto an upper electrode 7. At this time, the heater 8 supplements heat at the periphery of the sample 2 through the clamp 3. Consequently, temperature difference with respect to the central part of sample surface is alleviated through heat conduction from the clamp contacting with the sample at the periphery thereof. According to this method, plasma processing speed can be made uniform and reaction products adhering to the clamp can be reduced.</p> |
