发明名称 SEMICONDUCTOR LASER AND MANUFACTURE THEREOF
摘要 PURPOSE:To obtain a high light output at a low threshold current, by making the cross-sectional areas of the light output end face of a guide layer and regions near the light output end face larger than the internal cross-sectional areas of the regions. CONSTITUTION:Light is transmitted mostly through an active AlGa1-xAs layer 14 almost in the longitudinal direction of a resonator to start laser operation with low carrier injection. An AlyGa1-yAs guide layer 131, which is thick at the mirror surface of the resonator that is a light emission end face, is provided. The spot diameter of the transmitted light increases. As a result, the power density of light on the laser light emission mirror end face of the resonator falls. For this reason, the socalled optical damage on the end face of the resonator is unlikely to occur and operation with a high light output is enabled.
申请公布号 JPS5636183(A) 申请公布日期 1981.04.09
申请号 JP19790111360 申请日期 1979.08.31
申请人 NIPPON ELECTRIC CO 发明人 MATSUMOTO YOSHINARI;IDE YUUICHI
分类号 H01L21/208;H01S5/00;H01S5/227 主分类号 H01L21/208
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