| 摘要 |
PURPOSE:To decrease the number of marks and eliminate the waste by a method wherein not less than three marks are formed on a specified field of a chip consisting of a plurality of fields, distances among the marks are measured, a stage is moved only by the distances and the fields are exposed by electron beams. CONSTITUTION:Three L-shaped marks M1-M3 are previously formed only on a field F1 of a chip T consisting of nine fields. A distance between M1 and M2 (the ratio of it to a distance (a) is fixed) and a distance between M1 and M3 (the ratio of it to a distance (b) is fixed) are measured by moving a stage, the field F1 is exposed by electron beams, and the field F2 is successively exposed by moving the stage only by (a) in the X direction. Thus, a comparatively large chip can easily be exposed while the wasteful portions of the chip due to the existence of the marks are decreased, and influences by the expansion of the fields due to the main causes of a temperature change, etc. on exposure can be prevented. |
