DATA READOUT CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To enhance the data readout speed of an EPROM. CONSTITUTION:The input SIN1 of a sense circuit SA1 is connected to the input RIN1 of a reference-voltage generation circuit RA1; the gate of an N-type MOSFET MN13 is connected to the output VO1 of an inverter circuit INV11 constituting the sense circuit RA1. When selected column lines D1 to Dn are charged, the output VO1 of the inverter circuit INV11 of the sense circuit RA1 is set to a high level, the selected column lines are charged via a P-type MOSFET MP11 and an N-type MOSFET MN11, the N-type MOSFET MN13 is set to a continuity state at the same time and they are charged from the reference-voltage generation circuit RA1. As a result, the column lines are charged at high speed and the data readout of the title memory device can be speeded up.