| 摘要 |
PURPOSE:To improve an ESD resistance of an external connection peripheral transistor to be assembled in a semiconductor integrated circuit device. CONSTITUTION:A peripheral transistor such as an N-channel MOS transistor 9 to be used for an open drain output terminal has a channel structure in which an electrostatic stress current ES can be more easily released as compared with an internal transistor for performing a logical process. For example, a channel length of the transistor 9 is set shorter than the minimum channel length of the internal transistor in a range for satisfying a rated breakdown voltage. A substrate contact for grounding is provided at a position separate from a drain region D. A source contact is approached to a gate electrode G side as compared with a drain contact. The transistor 9 has a CONV structure while the internal transistor has an LDD structure. Thus, the equivalent operation of an N-P-N bipolar transistor is enhanced in speed and efficiency, and the current ES is easily released. |
