| 摘要 |
PURPOSE:To make it possible to farm a quantum device which scarcely scatters electron by forming grooves by etching a given area on a single-crystal silicon thin film on an isolating film by of a converged iron beam with subsequent oxidation. CONSTITUTION:A silicon oxide 2 and a single-crystal silicon 3 are laminated on a silicon substrate 1. A resist 4 is formed on it in a given configuration. Then, with this resist 4 as a mask, a silicon edge line 5 is obtained by anisotropically etching the silicon substrate 1, silicon oxide film 2, and single- crystal silicon 3. Then, an isolating oxide film 8 is formed in a grooved part 7 thereby to obtain the quantum dots 9 and quantum fine lines 10 isolated or connected by this isolating oxide film 8. Hence, it is possible to easily form the quantum device which scarcely scatters electron. |
