| 摘要 |
PURPOSE:To save man-hours for assembling, to make the size small and to facilitate the matching by forming a resistor, a line and a static capacitor onto a semiconductor board arid mounting a chip active element onto the board. CONSTITUTION:Each of GaAs FETs 1, 2 being chips consists of e.g. a 1st stage element whose gate width is as narrow as 3mm and a 2nd stage element whose gate width is as wide as 12m. Then the circuit is provided with a parallel flat capacitor 3 used to cut a DC current, a matching MIM capacitor 4 and a MIM capacitor 5 connecting a high frequency component to ground. Then the MIM capacitors 3-5, a bias resistor 6 and a microstrip 8 are formed on an Si board 9 and the GaAs FETs 1, 2 being active elements are mounted thereon to save man-hours for assembly, the size is made small and the matching is facilitated even in a high frequency range. |
