| 摘要 |
PURPOSE:To reduce the ROM area of a semiconductor device in which a ROM is built and, further, reduce a manufacturing TAT after a ROM code. CONSTITUTION:A polycrystalline silicon film 3a which is to be a gate electrode is insulated with a silicon nitride film 5 and silicon oxide films 7 which are uniformly left on the side surfaces by etching back and the source and drain regions 8a of a specific transistor are connected to each other with a high melting point metal film 11. |
