| 摘要 |
<p>PURPOSE:To provide a nonlinear resistance film having a good nonlinear characteristic by using an aluminum compd. which can be largely changed in electrical characteristics by changing its compsn. and to allow the formation of this nonlinear resistance film at a low temp. CONSTITUTION:This nonlinear resistance element 1 consists of an MIM element structure formed by inserting the nonlinear resistance film 3 between a metallic electrode 5 and a signal electrode 4. The nonlinear resistance film consists of a compd. constituted of the aluminum and at least one among oxygen, nitrogen and hydrogen. The aluminum in this compd. is incorporated therein at a ratio higher than the stoichiometric ratio. The nonlinear resistance film is formed of the film thickness ranging from 1000 to 3000Angstrom . The nonlinear resistance film is formed by using a reactive sputtering method, DC magnetron sputtering method, ion plating method or ECR reactive vapor deposition method, etc.</p> |
