| 摘要 |
<p>PURPOSE:To improve the holding characteristic and writing characteristic of a high-fineness active matrix liquid crystal panel by specifying the length in the channel direction of high-resistance impurity regions to 0.1 to 1mum. CONSTITUTION:An insulating substrate 1, such as quartz substrate or glass substrate, and polycrystalline silicon thin films 2 to 4 are provided. The polycrystalline silicon thin films 2 are low-resistance impurity regions to constitute source and drain regions when boron is used as an impurity in the case of a P type and a phosphorus atom in the case of an N type according to the polarities of the transistors. The polycrystalline silicon thin films 3 are active regions (channel regions) where a slight amt. of the P type or N type impurity is doped or is used usually in an intrinsic state. The polycrystalline silicon thin films 4 are the high-resistance impurity regions which are called LDD regions. The length (Loffset) in the channel direction of the LDD regions is specified to 0.1 to 1mum. Then, the IOFF decreased and ION increases.</p> |
