| 摘要 |
PURPOSE:To provide the manufacturing method for an amorphous semiconductor thin film having excellent productivity and no irregularity in the face direction of characteristics. CONSTITUTION:This semiconductor thin film is formed by alternately repeating a film forming process, wherein an amorphous semiconductor thin film is formed on a substrate 4 by introducing raw gas across an electrode couple (gas dissociation device) 1 opposing to the film-forming substrate 4 in a film-forming chamber 10, and a chemical annealing process in which the introduction of raw gas is shut out and atomlike hydrogen is grown by introducing hydrogen gas. Both film formation and chemical annealing can be conducted by merely switching gas by a gas dissociation device, and productivity can be improved. |
