| 摘要 |
<p>PURPOSE:To improve an image grade and to enhance the yield of production by preventing the defects generated on a display screen even if a metallic material which is low in resistance but is weak in acid resistance is used for scanning lines or signal lines. CONSTITUTION:Only the gate electrodes 4 of thin-film transistors(TFTRs) 18 are formed of an acid resistant material if the TFTRs 18 are of a reverse stagger type. Contact holes are then provided in insulating films 5 thereon and the scanning lines 3 on the insulating films 5 are connected via the contact holes to the gate electrodes 4. The material having the high acid resistance can, therefore, be used for the gate electrodes 4 near a substrate 1. On the other hand, a material having a low resistance value is usable for the scanning lines 3 thereon. The source electrodes of the TFTRs are formed of the acid resistant material and the contact holes are provided on the insulating films thereon. The signal lines on the insulating films are connected via these contact holes to the source electrodes. The material having the excellent acid resistance is, therefore, usable for the source electrodes near the substrate. On the other hand, the material having the low resistance value is usable for the signals line thereon.</p> |
