| 摘要 |
PURPOSE:To improve the controlling accuracy of a side etching amt. provided in a light-shielding film around a pattern to form a phase shifter of a mask for lithography which has the phase shifter to cause inversion of phase to UV ray for exposure by providing a difference of thickness in a substrate near the pattern. CONSTITUTION:On a light transmitting substrate 1, a monitor pattern 3 comprising a light-shielding film is provided at the position where the main pattern 2 is not hindered. This monitor pattern 3 is irradiated with light during side etching. The end point of side etching is determined by tracing the transmission or reflection intensity of light by side etching of the monitor pattern. |
