发明名称 |
METHOD OF MAKING HETEROJUNCTION BIPOLAR TRANSISTOR |
摘要 |
A method of manufacturing a heterojunction bipolar transistor is disclosed. On a base layer (13) of a first semiconductor which contains at least one of gallium and arsenic as a constituent element, an emitter layer (14) of a second semiconductor which contains at least one of gallium and arsenic as a constituent element and which has a band gap larger than that of the first semiconductor is formed. Predetermined regions of the emitter layer (14) and an upper portion of the base layer (13) is removed to obtain a mesa structure. Then, a surface of a junction region of the base layer (13) and the emitter layer (14) which is exposed on the edge of the mesa structure by using sulfide. After the surface passivation, the surface of the junction region is covered with an insulating film. <IMAGE> |
申请公布号 |
EP0460429(A3) |
申请公布日期 |
1993.03.24 |
申请号 |
EP19910107774 |
申请日期 |
1991.05.14 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LIMITED |
发明人 |
SHIKATA, SHINICHI |
分类号 |
H01L21/314;H01L21/318;H01L21/331;H01L23/29;H01L29/737;(IPC1-7):H01L21/314;H01L29/73 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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