Metal insulator semiconductor field effect transistor

摘要

A Metal Insulator Semiconductor Field-Effect Transistor (MISFET) has an insulating layer arranged between a gate electrode and a semiconductor substrate. The insulating layer is a layer of amorphous, hydrogenated carbon (a-C:H) with a thickness-in the region of the gate electrode-of up to 1 mu m, and with a resistivity ( eta ) greater than or equal to 106 OMEGA xcm at the boundary surface to the semiconductor substrate. The semiconductor substrate consists of a semiconductor material other than silicon.