摘要 |
In a semiconductor device such as hybrid IC, thermal heads, etc., a thick film resistor of the semiconductor device contains a boride particle of a metal dispersed in a glass matrix, the particle having a particles size of 0.005 to 0.1 mu m. Generation of a thermal stress can be suppressed and the electroconductive particles themselves form isotropic electroconductive passages by such dispersion, and the semiconductor devices can have a distinguished electroconductivity. Preferable boride of a metal is LaB6, which gives distinguished resistor characteristics.
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申请人 |
HITACHI, LTD.;HITACHI CHEMICAL COMPANY, LTD. |
发明人 |
ITO, OSAMU;ASAI, TADAMICHI;OGAWA, TOSHIO;HASEGAWA, MITSURU;IKEGAMI, AKIRA;ENDOH, YOSHISHIGE;OOTANI, MICHIO;EBISAWA, KATSUO |