Method of manufacturing semiconductor device with controlled carrier lifetime

摘要

A semiconductor device has a semiconductor substrate, an insulated gate field-effect transistor section formed in the substrate and a peripheral section formed in the substrate and arranged to substantially surround the field-effect transistor section. A passivation layer of an organic material is provided over that part of the substrate in which the field-effect transistor section is not located. The device may be resin mold packaged for an enhanced humidity-resistance by making use of the fact tht the peripheral portion of the device is covered with organic resin.