Method of making source junction breakdown for devices with source-side erasing

摘要

A method for making a device and the device itself which utilizes selectively doping part of the channel directly adjacent to the source to improve source-channel junction breakdown voltage is disclosed. This is accomplished through reduced dopant incorporation in the channel directly adjacent to the source during the channel doping steps. The portion of the channel which receives less channel dopant should not be so great that the charging of the floating gate is significantly altered.