发明名称 METHOD OF MAKING A STACKED CAPACITOR DRAM CELL
摘要 A stacked multi-fingered cell (SMFC) capacitor using a modified stacked capacitor storage cell fabrication process. The (SMFC) is made up of polysilicon structure, having a multi-fingered cross-section, located at a buried contact and extending to an adjacent storage node overlaid by polysilicon with a dielectric sandwiched in between. The addition of the polysilicon structure increases storage capability 120% without enlarging the surface area defined for a normal stacked capacitor cell.
申请公布号 US5196364(A) 申请公布日期 1993.03.23
申请号 US19900602828 申请日期 1990.10.24
申请人 MICRON TECHNOLOGY, INC. 发明人 FAZAN, PIERRE C.;DENNISON, CHARLES H.;LEE, RUOJIA;LIU, YAUH-CHING
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L27/04
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