发明名称 |
METHOD OF MAKING A STACKED CAPACITOR DRAM CELL |
摘要 |
A stacked multi-fingered cell (SMFC) capacitor using a modified stacked capacitor storage cell fabrication process. The (SMFC) is made up of polysilicon structure, having a multi-fingered cross-section, located at a buried contact and extending to an adjacent storage node overlaid by polysilicon with a dielectric sandwiched in between. The addition of the polysilicon structure increases storage capability 120% without enlarging the surface area defined for a normal stacked capacitor cell.
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申请公布号 |
US5196364(A) |
申请公布日期 |
1993.03.23 |
申请号 |
US19900602828 |
申请日期 |
1990.10.24 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
FAZAN, PIERRE C.;DENNISON, CHARLES H.;LEE, RUOJIA;LIU, YAUH-CHING |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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