| 摘要 |
PURPOSE:To improve surge breakdown voltage between a drain electrode and a surge electrode, to reduce a lead-out resistance of an avalanche current and to realize further fining. CONSTITUTION:An electrode 17 is also provided to a rear of a semiconductor substrate 1a and a drain electrode 14 is connected to a buried layer 2; thereby, a diode D3 is formed of the semiconductor substrate 1a and the buried layer 2. Since the diode D3 formed of the semiconductor substrate 1a and the buried layer 2 is formed in a wide range of an element, a surge breakdown voltage is increased. Furthermore, the ohmic connection between the buried layer 2 and the drain electrode 14 realizes effective reduction of a lead-out resistance of an avalanche current and further fining since formation of a deep base region is not required.
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