| 摘要 |
PURPOSE:To eliminate breaking of a lead wire by a method wherein an impurity doped region is formed on a semiconductor substrate and after formation of single crystal on the impurity doped region of the substrate and polycrystal on the other section, the latter is removed and then a metal lead is provided on the single crystal. CONSTITUTION:An n<+> type sourced and drain 3 is formed by providing a mask 2 of a field SiO2 film on a p type Si substrate 1. After a field SiO2 film 4 and a gate SiO2 film 5 are formed on the surface of the substrate 1, an Si film 6 is formed on the whole surface. And on the source and drain, an Si film is formed in single crystal and on the other side of the SiO2 film, an Si film is formed in polycrystal. After removal of the polycrystal Si, an Al film is formed on the field film as an electrode lead for the source and drain on the single crystal Si. Hence, a penetration on the source and drain is eliminated and a lead having no breakage of wire can be formed. This method is applicable for a bipolar and a JFET besides an MOSFET. |
