| 摘要 |
PURPOSE:To provide a forming method for the electrode of an SiC light emitting diode in which the structure of a p type ohmic electrode formed on a p type SiC is simple and shape change of an A1 which constitute this electrode due to evaporation, ball up, etc., can be prevented. CONSTITUTION:A n type epitaxial SiC layer 2 and a p type epitaxial SiC layer 3 are formed in this sequence on an n type SiC substrate 1 as light emitting layers. After the A1 layer is formed on the p type epitaxial SiC layer 3 as a p type electrode by a vacuum evaporation method, etc., heat treatment is executed at above 800 deg.C in inert gas so as to form a p type ohmic electrode 20. |
