| 摘要 |
The method for masa-producing the thin film of InSb for Hall device comprises the steps of individually applying a voltage (Pa) to each of deposition boats (1a,1b,1c) arranged in a same deposition reservoir (6), applying a voltage (Pb) to an auxiliary heater (2) around the deposition boats to reduce the temperature deviation when in continuous depositing, and constantly maintaining the sum (Pa+Pb) of voltage values (Pa) and (Pb), thereby evaporating the thin film (7) of InSb onto a parrite substrate (4) to simplify the manufacturing process.
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