| 摘要 |
PURPOSE:To get rid of a defective luminous shape without fail by providing a P diffusion part which acts as a defect detecting pattern in a manner it surrounds a light emitting part and also in a manner the state of defective- characteristics is obtained when a luminous shape defective part contact with the defecting pattern. CONSTITUTION:A diffusion insulating film 2 is coated on a substrate 1 and a P<+> diffusion part, along with a light emitting part 3a, and a defect detecting pattern 3b which surrounds them are formed at the same time. This process is just to make a mask with such a pattern and so it is easily made. The defect detecting pattern 3b acts also as a scribing line of a wafer and it is continuously arranged over the entire surface of the wafer. Therefore, at the end of the wafer, the P<+> diffusion part 3b and an N side electrode 6 constitute a short circuit, and so, if an abnormal diffusion part 4 contacts with the P<+> diffusion part 3b, a short circuit is constituted. As a result, a luminous shape defectiveness is detected. |
