| 摘要 |
<p>PURPOSE:To obtain a liquid crystal display device in which a protective layer for a transistor is easily formed and which has stab transistor characteristic without using the SiN based protective layer. CONSTITUTION:This device is provided with an active matrix substrate 1 where a liquid crystal display part consisting of a matrix-state picture element electrode and a thin film transistor part for driving the picture element electrode, a horizontal(scanning line) driving circuit 4 which is connected to the liquid crystal display part, and a vertical(signal line) driving circuit 5 which is connected to the liquid crystal display part are formed; an upper substrate 2 which is overall opposed to the active matrix substrate; and a liquid crystal layer interposed and held between the active matrix substrate 1 and the upper substrate 2. Then, the liquid crystal display part is protected by a silicon oxide based insulating film and the liquid crystal layer.</p> |
