| 摘要 |
<p>PURPOSE:To use of low-resistance Cu as a wiring material and to form wiring patterns having multilayered structures free from overhangs by making combination use of an etching method and a lift-off method. CONSTITUTION:The 1st wiring pattern 2 is formed of a conductive material consisting of Cr on a glass substrate 1. A negative resist is then applied thereon and is exposed from the rear surface of glass to form the resist 3 of the shape reverse from the shape of the wiring pattern 2. Namely, the line width WP of the wiring pattern and the opening size WR of the resist 3 are made into a relation WP>WR by a light diffraction effect. The opening size WR can be adjusted by controlling the exposure from the rear surface of the substrate. Cu 4 and Cr 5 are then deposited as the conductive material and the resist 3 is peeled, by which the 2nd wiring pattern is lifted off and formed. The line width of the wiring pattern 6 is the opening size WR of the resist 3. The 2nd wiring pattern 6 consisting of the Cu is formed on the 1st wiring pattern 2 in this way, by which fine working is allowed.</p> |
