发明名称 RESIN SEALED-TYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable a resin sealed-type semiconductor device to be enhanced in saturated thermal resistance property by a method wherein an active element is mounted on the surface of a ceramic board, and a sealing resin layer is made to coat so as to expose the surface of the ceramic board opposite to the surface where the active element is mounted. CONSTITUTION:A lead frame 1 whose surface is formed of copper or copper alloy is equipped with a bed and inner leads, and an active element is built in a semiconductor substrate 2 mounted on tone bed concerned. Prescribed impurities are introduced and diffused into a silicon substrate for the formation of the active element concerned. The semiconductor substrate 2 in which the active element is built is fixed to the lead frame 1 with a solder layer 3. Then, electrodes formed on the active element and the like are electrically connected with fine metal wires 5. Furthermore, the lead frame 1 is mounted on a ceramic substrate 7 with a low-melting Sn-Pb solder layer 8 to form an assembly of integral structure. Then, the assembly is sealed up With thermoplastic resin 6, where an outer lead 4 and the rear of the substrate 7 are exposed outside of the resin layer 6. By this setup, a resin-sealed type semiconductor of this design can be enhanced in saturated thermal resistance property.
申请公布号 JPH0567697(A) 申请公布日期 1993.03.19
申请号 JP19910229878 申请日期 1991.09.10
申请人 TOSHIBA CORP 发明人 TAKAHASHI WATARU;SATO NOBUYUKI
分类号 H01L23/28;H01L23/373 主分类号 H01L23/28
代理机构 代理人
主权项
地址