发明名称 VARIABLE-MAGNIFICATION TYPE MASK
摘要 <p>PURPOSE: To provide an X-ray masking structure for X-ray lithography which is capable of variably adjusting the magnification of a pattern formed on a mask film by action force. CONSTITUTION: Action force is applied by the thermal expansion of a deformation element and stress on a supporting ring 10, which is generated due to thermal expansion. A circular pattern mask film 16 is supported in the ring 10, constituted of silicon or silicon Pyrex (Registered Trademark). The ring 10 includes a concentric aluminum ring 14 having an embedded circular thermal element 12. The element 12 makes the ring 14 expand and allows the inside of the ring 10 to generate mechanical stresses, so that the film 16 is expanded. When the film 16 is expanded, a pattern on the film 16 is correspondingly enlarged in response to the expansion of the film 16.</p>
申请公布号 JPH0567562(A) 申请公布日期 1993.03.19
申请号 JP19920021852 申请日期 1992.01.11
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 BINSENTO DAI MIRIA;JIYON MAIKERU UOOROOMONTO
分类号 G03F1/22;G03F7/20;G21K1/10;H01L21/027 主分类号 G03F1/22
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