| 摘要 |
<p>PURPOSE:To realize the projection exposure of a fine pattern without using any highly precise phase shift mask whose manufacture, inspection, and correction are difficult as to the projection exposing method required for photolithography technology used in the manufacturing process of, for example, a semiconductor integrated circuit device and the optical mask which is used for the method. CONSTITUTION:The optical mask 4 consists of a main space 6 in which the light from a light source 9 irradiates the optical mask 4, projects a light image transmitted through the optical mask 4 on a photoresist film 2 through a lens 3 and transmits the light, and has a desired exposure pattern and a subordinate space 7 which is provided nearby the main space 6 and narrow enough so as not to expose the photosensitive film 2 by itself although the light is transmitted.</p> |
