MOS TYPE SEMICONDUCTOR INTEGRATED CIRCUIT,申请号JP19910227615-传众专利搜索

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发明名称	MOS TYPE SEMICONDUCTOR INTEGRATED CIRCUIT
摘要
申请公布号	JPH0567740(A)	申请公布日期	1993.03.19
申请号	JP19910227615	申请日期	1991.09.09
申请人	NEC CORP	发明人	HAYASE TSUTOMU
分类号	H01L21/8234;H01L27/06;H01L27/088	主分类号	H01L21/8234
代理机构		代理人
主权项
地址

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