MANUFACTURING METHOD OF PHOTO DIODE FOR IMPROVED PHOTO-FIBER COMMUNICATION

摘要

The method for decreasing a dark current and planarizing a mesa type photo diode comprises the steps of growing an i-GaInAs layer (2) and a p-GaInAs layer (3) on an n-InP substrate (1) to form a pn junction, carrying out a lithographic process to perform a mesa etching, coating a polyimide layer (4) thereon to complete a passivation of the exposed pn junction part, depositing a SiO2 film (5) onto the polyimide layer (4), patterning the substrate by using a lathographic process and etching the SiO2 film (5), patterning the polyimide layer (4) by using a plasma ashing method, applying a silicon nitride film thereon to form a nonreflective film (9), and forming an electrode pad (6).