| 摘要 |
PURPOSE:To form a quantum thin wire and a quantum box and to realize a high-performance semiconductor device by using them by a method wherein a plurality of kinds of semiconductor constitutent elements are adsorbed regularly into the surface of a crystal by an interaction between compound molecules by using the compound molecules which contain the respective constituent elements. CONSTITUTION:For example, when triisobutyl aluminum (TIBAl) is introduced into a substrate where an As atomic layer has been formed on the surface, it is adsorbed partially and regularly into the substrate due to a repulsive force between molecules. Then, while the substrate is being irradiated with an ArF excimer laser, AsH3 is introduced. Then, an isobutyl group is desorbed from the TIBAl, it is replaced by As atoms and Al is bonded to As. Then, when triethlygallium is introduced, Ga is adsorbed into a lattice point which is not occupied by Al. After that, while the laser is being irradiated, AsH3 is introduced into the substrate. Then, Ga is bonded to As, and Al and Ga are arranged regularly in the same atomic layer. Thereby, a plurality of atoms are arranged regularly in a direction perpendicular to a growth direction. |
