| 摘要 |
<p>A method for making an anti-fuse structure characterized by the steps of forming a conductive base layer (10); forming an anti-fuse layer (20) over the base layer; patterning the anti-fuse layer to form an anti-fuse island (24a, 24b); forming an insulating layer (26) over the anti-fuse island; forming a via hole (28a, 28b, 28c) through the insulating layer to the anti-fuse island; forming a conductive connection layer (32) over the insulating layer and within the via hole; and patterning the conductive connection layer to form a conductive contact (30a, 30b, 30c) to the anti-fuse island. Preferably, the anti-fuse island comprises amorphous silicon which can optionally be covered with a thin layer of a titanium-tungsten alloy.</p> |
