| 摘要 |
PURPOSE:To prevent the breaking of a wire by developing a positive type resist by a developer diluted to 10-40% or 60-100% by pure water wherein a resist angle of about 20-70 deg. is formed. CONSTITUTION:A positive type resist film 10 is uniformly formed on an SiO2 film 9 located on a flat Si substrate 8. Next, a developer is diluted to about 67% by pure water for development. As a result, a pattern 10 with a resist angle of 60 deg. will be obtained. Next, with the SiO2 film 9 opened by photoethcing to evaporate Al 11, no breaking of a wire will exist because of heavy thickness of a stepped section. The resist angle greatly depends on the concentration of the developer. Therefore, the breaking of a wire will be prevented by observing the concentration of the developer only and by adjusting the sectional shape of the resist. |
